| PART |
Description |
Maker |
| ENA1198 SCH2408 |
350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| KRF7343 |
HEXFET Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| STL75NH3LL |
N-channel 30 V, 0.004 Ω, 20 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V, 0.004 ヘ, 20 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STL6NM60N |
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET
N-channel 600 V - 0.85 ヘ - 5.75 A - PowerFLAT⑩ (5x5) ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| 5LP01N |
Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(超高速转换应用的P沟道硅MOSFET)
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Pico MOSFET Series
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| 2SK1450 |
20 A, 450 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo
|
| 2SJ485 2SJ485TP-FA |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SK4183 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
13 A, 525 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
|
| 2SK2530 2SK2530TP-FA |
2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| STP30NM30N |
N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET
N-channel 300V - 0.078ヘ - 30A - TO-220 Ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| IRLR8726PBF09 IRLR8726TRR IRLR8726TRPBF IRLR8726PB |
HEXFET Power MOSFET
86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra-Low Gate Impedance
|
International Rectifier
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
|
